IRLL024Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Package / Case :

TO-261-4, TO-261AA

Surface Mount :

yes

Number of Elements :

1

Drain-source On Resistance-Max :

0.1Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5A

FET Type :

N-Channel

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Terminal Position :

Dual

Vgs (Max) :

±16V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

55V

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

60m Ω @ 3A, 10V

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Case Connection :

DRAIN

JESD-609 Code :

e0

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

245

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V