IRLL024Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

55V

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

245

Published :

2004

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

5A

Series :

HEXFET®

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

60m Ω @ 3A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Number of Elements :

1

Packaging :

Tube

Drain-source On Resistance-Max :

0.1Ohm

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Power Dissipation-Max :

1W Ta

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

4

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE