IRL1404ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Power Dissipation-Max :

230W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 5V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 75A, 10V

Transistor Application :

SWITCHING

Packaging :

Tube

Case Connection :

DRAIN

Published :

2004

Avalanche Energy Rating (Eas) :

220 mJ

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±16V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

75A

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

790A

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0031Ohm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE