IRL1404STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

40V

Pulsed Drain Current-Max (IDM) :

640A

Element Configuration :

Single

Turn On Delay Time :

18 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

160A

Rise Time :

270ns

Width :

4.826mm

Radiation Hardening :

No

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Published :

2002

Height :

4.703mm

Power Dissipation :

3.8W

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Length :

10.668mm

Power Dissipation-Max :

3.8W Ta 200W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

JESD-609 Code :

e3

Mount :

Surface Mount, Through Hole

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Packaging :

Tape and Reel (TR)

Current Rating :

160A

Fall Time (Typ) :

130 ns

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

520 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Lead Free :

Contains Lead, Lead Free

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Resistance :

4mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

40V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Number of Pins :

3

Series :

HEXFET®

FET Type :

N-Channel

Turn-Off Delay Time :

38 ns