IRL1404SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.004ohm

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Number of Elements :

1

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

160A

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

Avalanche Energy Rating (Eas) :

520 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 200W Tc

Terminal Position :

Single

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Pulsed Drain Current-Max (IDM) :

640A

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

FET Type :

N-Channel

Published :

2004

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

40V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier