IRL1404PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Number of Pins :

3

Packaging :

Tube

Power Dissipation :

200W

Number of Elements :

1

Avalanche Energy Rating (Eas) :

620 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Current Rating :

160A

Series :

HEXFET®

Package / Case :

TO-220-3

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6590pF @ 25V

Published :

2004

Rise Time :

270ns

Lead Free :

Lead Free

Radiation Hardening :

No

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Length :

10.5156mm

Turn On Delay Time :

18 ns

Pulsed Drain Current-Max (IDM) :

640A

Number of Terminations :

3

Voltage - Rated DC :

40V

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Transistor Application :

SWITCHING

Width :

4.69mm

Resistance :

4mOhm

Height :

15.24mm

Continuous Drain Current (ID) :

160A

Fall Time (Typ) :

37 ns

Recovery Time :

94 ns

ECCN Code :

EAR99

Turn-Off Delay Time :

38 ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Threshold Voltage :

3V

Case Connection :

DRAIN

Power Dissipation-Max :

200W Tc

REACH SVHC :

No SVHC