IRL1404LPBF
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- Mfr.Part #
- IRL1404LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A TO262
- Stock
- 4,078
- In Stock ：
- 4,078
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 520 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 3.8W
- Series :
- HEXFET®
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.3V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Power Dissipation-Max :
- 3.8W Ta 200W Tc
- Mount :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Published :
- 2004
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Drain to Source Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 160A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 5V
- Drain-source On Resistance-Max :
- 0.004ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 95A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 640A
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 270ns
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 40V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Current Rating :
- 160A
- Transistor Element Material :
- SILICON
- Datasheets
- IRL1404LPBF
N-Channel Tube 4m Ω @ 95A, 10V ±20V 6600pF @ 25V 140nC @ 5V TO-262-3 Long Leads, I2Pak, TO-262AA
IRL1404LPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 520 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 160A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.As far as peak drain current is concerned, its maximum pulsed current is 640A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.3V 10V).
IRL1404LPBF Features
the avalanche energy rating (Eas) is 520 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 40V voltage
based on its rated peak drain current 640A.
IRL1404LPBF Applications
There are a lot of Infineon Technologies
IRL1404LPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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