IRGS4B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

63W

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Gate-Emitter Thr Voltage-Max :

5.5V

Input Type :

Standard

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Power Dissipation :

63W

ECCN Code :

EAR99

Element Configuration :

Single

Td (on/off) @ 25°C :

22ns/100ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Switching Energy :

73μJ (on), 47μJ (off)

Number of Elements :

1

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

24A

Transistor Element Material :

SILICON

Gate Charge :

12nC

Published :

2004

RoHS Status :

RoHS Compliant

Max Collector Current :

12A

Operating Temperature :

-55°C~175°C TJ

Fall Time-Max (tf) :

89ns

Polarity/Channel Type :

N-Channel

Transistor Application :

Motor Control

Collector Emitter Breakdown Voltage :

600V

JESD-609 Code :

e3

Rise Time :

23ns

Moisture Sensitivity Level (MSL) :

Not Applicable

Turn Off Time-Nom (toff) :

199 ns

IGBT Type :

NPT

Test Condition :

400V, 4A, 100 Ω, 15V

Collector Emitter Saturation Voltage :

2.5V

Turn On Time :

40 ns

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

600V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 4A

Mounting Type :

Surface Mount

Number of Terminations :

2