IRGP50B60PD1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Pins :

3

Turn Off Time-Nom (toff) :

161 ns

Max Power Dissipation :

390W

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Current Rating :

75A

Factory Lead Time :

14 Weeks

Published :

2004

Current - Collector Pulsed (Icm) :

150A

Packaging :

Tube

Mount :

Through Hole

Lead Free :

Lead Free

Gate Charge :

205nC

Gate-Emitter Voltage-Max :

20V

Reverse Recovery Time :

42 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

255μJ (on), 375μJ (off)

Weight :

38.000013g

Width :

5.3086mm

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

2.85V

Td (on/off) @ 25°C :

30ns/130ns

ECCN Code :

EAR99

Turn-Off Delay Time :

130 ns

Termination :

Through Hole

Case Connection :

COLLECTOR

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Fall Time-Max (tf) :

20ns

IGBT Type :

NPT

Mounting Type :

Through Hole

Height :

20.7mm

Package / Case :

TO-247-3

Element Configuration :

Single

Test Condition :

390V, 33A, 3.3 Ω, 15V

Collector Emitter Saturation Voltage :

2.35V

REACH SVHC :

No SVHC

Number of Terminations :

3

Max Collector Current :

75A

JEDEC-95 Code :

TO-247AC

Power Dissipation :

390W

Transistor Element Material :

SILICON

Turn On Time :

39 ns

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Vce(on) (Max) @ Vge, Ic :

2.85V @ 15V, 50A

Length :

15.87mm

Turn On Delay Time :

30 ns

Voltage - Rated DC :

600V

Rise Time :

10ns

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

5V