IRGP4266PBF
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- Mfr.Part #
- IRGP4266PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 650V 140A 450W TO247AC
- Stock
- 1,385
- In Stock ：
- 1,385
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Voltage-Max :
- 20V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C~175°C TJ
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Collector Emitter Saturation Voltage :
- 1.7V
- REACH SVHC :
- No SVHC
- Switching Energy :
- 3.2mJ (on), 1.7mJ (off)
- RoHS Status :
- RoHS Compliant
- Current - Collector Pulsed (Icm) :
- 300A
- Max Collector Current :
- 140A
- Collector Emitter Breakdown Voltage :
- 650V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Weight :
- 38.000013g
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Td (on/off) @ 25°C :
- 80ns/200ns
- Rise Time-Max :
- 105ns
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- Height :
- 21.1mm
- Max Power Dissipation :
- 450W
- Published :
- 2012
- Factory Lead Time :
- 14 Weeks
- Number of Pins :
- 3
- Gate-Emitter Thr Voltage-Max :
- 7.7V
- Mount :
- Through Hole
- Length :
- 16.13mm
- Gate Charge :
- 210nC
- Width :
- 5.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Test Condition :
- 400V, 75A, 10 Ω, 15V
- Input Type :
- Standard
- Fall Time-Max (tf) :
- 55ns
- Power - Max :
- 450W
- Element Configuration :
- Single
- Datasheets
- IRGP4266PBF
IRGP4266PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4266PBF Description
The IRGP4266PBF is an IGBT 650 V 140 A 450 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRGP4266PBF Features
-
Positive VCE (ON) Temperature Coefficient
-
5.5μs short circuit SOA
-
Lead-Free, RoHS compliant
-
Low VCE(ON) and switching Losses
-
Square RBSOA and Maximum Junction Temperature 175°C
-
VCES = 650V
-
IC = 90A, TC =100°C
-
tSC≥5.5μs, TJ(max) = 175°C
-
VCE(ON) typ. = 1.7V @ IC = 75A
IRGP4266PBF Applications
-
Inverters
-
UPS
-
Welding
-
Industrial Motor Drive
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