IRGP4078DPBF
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- Mfr.Part #
- IRGP4078DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT TRENCH 600V 74A TO247AC
- Stock
- 20,590
- In Stock ：
- 20,590
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Through Hole
- Element Configuration :
- Single
- Published :
- 2013
- Collector Emitter Saturation Voltage :
- 1.9V
- Operating Temperature :
- -55°C~175°C TJ
- Input Type :
- Standard
- IGBT Type :
- Trench
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 50A
- Gate-Emitter Voltage-Max :
- 20V
- Max Collector Current :
- 74A
- Package / Case :
- TO-247-3
- Polarity/Channel Type :
- N-Channel
- Switching Energy :
- 1.1mJ (off)
- Max Power Dissipation :
- 278W
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Height :
- 20.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 150A
- Collector Emitter Breakdown Voltage :
- 600V
- Width :
- 5.31mm
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Factory Lead Time :
- 12 Weeks
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Test Condition :
- 400V, 50A, 10 Ω, 15V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Power - Max :
- 278W
- Length :
- 15.87mm
- Td (on/off) @ 25°C :
- -/116ns
- Gate Charge :
- 92nC
- ECCN Code :
- EAR99
- Datasheets
- IRGP4078DPBF
IRGP4078DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4078DPBF Description
IRGP4078DPBF is a 600v n-channel insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRGP4078DPBF provides high efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGP4078DPBF is in the TO-247AC package with 278 power dissipation.
IRGP4078DPBF Features
Low VcE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175°C.
5 μs short circuit SOA
Square RBSOA
100% of the parts tested for LLM
Positive VcE (ON) Temperature coefficient
Ultra-low VF Hyperfast Diode
Tight parameter distribution
IRGP4078DPBF Applications
Communications equipment
Datacom module
Industrial
Building automation
Enterprise systems
Datacenter & enterprise computing
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