IRGP4072DPBF
- Mfr.Part #
- IRGP4072DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 300V 70A 180W TO247AC
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Length :
- 15.875mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time-Max :
- 50ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- IGBT Type :
- Trench
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Input Type :
- Standard
- Polarity/Channel Type :
- N-Channel
- Test Condition :
- 240V, 40A, 10 Ω, 15V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.7V
- Factory Lead Time :
- 14 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 180W
- Td (on/off) @ 25°C :
- 18ns/144ns
- Turn On Time :
- 55 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Package / Case :
- TO-247-3
- Reverse Recovery Time :
- 122 ns
- Gate-Emitter Thr Voltage-Max :
- 5V
- Turn Off Time-Nom (toff) :
- 309 ns
- Max Collector Current :
- 70A
- Number of Elements :
- 1
- Current - Collector Pulsed (Icm) :
- 120A
- RoHS Status :
- RoHS Compliant
- Gate-Emitter Voltage-Max :
- 20V
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 40A
- Number of Pins :
- 3
- Gate Charge :
- 73nC
- Max Power Dissipation :
- 180W
- JEDEC-95 Code :
- TO-247AC
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Height :
- 20.701mm
- Collector Emitter Breakdown Voltage :
- 300V
- Fall Time-Max (tf) :
- 124ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- POWER CONTROL
- Qualification Status :
- Not Qualified
- Published :
- 2007
- Switching Energy :
- 409μJ (on), 838μJ (off)
- Width :
- 5.3086mm
- Datasheets
- IRGP4072DPBF

IRGP4072DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4072DPBF Description
The IRGP4072DPBF IGBT from Infineon Technologies is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRGP4072DPBF Features
100% of the parts tested for clamped inductive load
Ultra-fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 150 °C
Square RBSOA
IRGP4072DPBF Applications
Welding
Solar converters and inverters
Uninterruptible Power Supplies
Battery operated vehicles
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