IRGP4072DPBF
- Mfr.Part #
- IRGP4072DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 300V 70A 180W TO247AC
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Turn On Time :
- 55 ns
- Power Dissipation :
- 180W
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 14 Weeks
- Fall Time-Max (tf) :
- 124ns
- JEDEC-95 Code :
- TO-247AC
- Width :
- 5.3086mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Reverse Recovery Time :
- 122 ns
- Packaging :
- Tube
- Transistor Application :
- POWER CONTROL
- IGBT Type :
- Trench
- Package / Case :
- TO-247-3
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 40A
- Gate-Emitter Voltage-Max :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 18ns/144ns
- Gate-Emitter Thr Voltage-Max :
- 5V
- Current - Collector Pulsed (Icm) :
- 120A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2007
- Max Power Dissipation :
- 180W
- Length :
- 15.875mm
- Height :
- 20.701mm
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Nom (toff) :
- 309 ns
- Switching Energy :
- 409μJ (on), 838μJ (off)
- Rise Time-Max :
- 50ns
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 73nC
- Max Collector Current :
- 70A
- Collector Emitter Saturation Voltage :
- 1.7V
- Input Type :
- Standard
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Test Condition :
- 240V, 40A, 10 Ω, 15V
- Datasheets
- IRGP4072DPBF

IRGP4072DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4072DPBF Description
The IRGP4072DPBF IGBT from Infineon Technologies is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRGP4072DPBF Features
100% of the parts tested for clamped inductive load
Ultra-fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 150 °C
Square RBSOA
IRGP4072DPBF Applications
Welding
Solar converters and inverters
Uninterruptible Power Supplies
Battery operated vehicles
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