IRGP4069DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

390μJ (on), 632μJ (off)

Power Dissipation :

268W

Gate-Emitter Thr Voltage-Max :

6.5V

Mounting Type :

Through Hole

Rise Time-Max :

42ns

Max Power Dissipation :

268W

Factory Lead Time :

16 Weeks

Published :

2007

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

IGBT Type :

Trench

Fall Time-Max (tf) :

54ns

Reverse Recovery Time :

120ns

Packaging :

Tube

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

1.85V

Turn Off Time-Nom (toff) :

188 ns

Length :

15.87mm

Mount :

Through Hole

Weight :

38.000013g

Radiation Hardening :

No

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

46ns/105ns

Transistor Application :

POWER CONTROL

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 35A

Case Connection :

COLLECTOR

Turn On Delay Time :

43 ns

JEDEC-95 Code :

TO-247AC

Number of Terminations :

3

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

105A

Gate Charge :

69nC

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Width :

5.3086mm

Number of Elements :

1

Test Condition :

400V, 35A, 10 Ω, 15V

Gate-Emitter Voltage-Max :

20V

Height :

20.7mm

Collector Emitter Saturation Voltage :

1.6V

Input Type :

Standard

Number of Pins :

3

Turn-Off Delay Time :

105 ns

Max Collector Current :

76A

Transistor Element Material :

SILICON

Turn On Time :

78 ns

Operating Temperature :

-55°C~175°C TJ