IRGP4069D-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Operating Temperature :

175°C

Rise Time-Max :

42ns

Time@Peak Reflow Temperature-Max (s) :

30

Gate-Emitter Voltage-Max :

20V

Reverse Recovery Time :

120 ns

Min Operating Temperature :

-55°C

Element Configuration :

Single

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

6.5V

Fall Time-Max (tf) :

54ns

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

188 ns

Terminal Finish :

MATTE TIN OVER NICKEL

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Package / Case :

TO-247-3

Number of Elements :

1

Collector Emitter Saturation Voltage :

1.85V

JEDEC-95 Code :

TO-247AD

Collector Emitter Voltage (VCEO) :

1.85V

Power Dissipation :

268W

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Collector Emitter Breakdown Voltage :

600V

Power Dissipation-Max :

268W

Turn On Time :

78 ns

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Max Collector Current :

76A