IRGP4063DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

60ns/145ns

Mount :

Through Hole

Length :

15.875mm

Transistor Application :

POWER CONTROL

Rise Time :

56ns

ECCN Code :

EAR99

Published :

2006

Number of Pins :

3

Current Rating :

96A

Transistor Element Material :

SILICON

Turn-Off Delay Time :

145 ns

Max Power Dissipation :

330W

Vce(on) (Max) @ Vge, Ic :

2.14V @ 15V, 48A

Test Condition :

400V, 48A, 10 Ω, 15V

Width :

5.3mm

Max Collector Current :

96A

Gate-Emitter Thr Voltage-Max :

6.5V

Packaging :

Tube

Power Dissipation :

330W

Voltage - Rated DC :

300V

Case Connection :

COLLECTOR

IGBT Type :

Trench

RoHS Status :

ROHS3 Compliant

Base Part Number :

IRGP4063D

Gate Charge :

95nC

Mounting Type :

Through Hole

Weight :

38.000013g

Switching Energy :

625μJ (on), 1.28mJ (off)

Collector Emitter Saturation Voltage :

2.14V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

100 ns

Package / Case :

TO-247-3

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

96A

Lead Free :

Lead Free

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

210 ns

Number of Elements :

1

Current - Collector Pulsed (Icm) :

144A

Polarity/Channel Type :

N-Channel

Factory Lead Time :

26 Weeks

Drain to Source Voltage (Vdss) :

300V

Reverse Recovery Time :

115 ns

Input Type :

Standard

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

60 ns

Number of Terminations :

3

JEDEC-95 Code :

TO-247AC

Height :

20.3mm

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

2.14V

Fall Time-Max (tf) :

46ns

Collector Emitter Breakdown Voltage :

600V