IRGIB7B60KDPBF
- Mfr.Part #
- IRGIB7B60KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT W/ULTRAFAST SOFT RECOVERY D
- Stock
- 11,357
- In Stock :
- 11,357
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Through Hole
- Transistor Application :
- Motor Control
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Rise Time :
- 22ns
- Factory Lead Time :
- 16 Weeks
- Lead Free :
- Lead Free
- IGBT Type :
- NPT
- Length :
- 10.6172mm
- Collector Emitter Saturation Voltage :
- 2.2V
- Gate Charge :
- 29nC
- Number of Elements :
- 1
- Published :
- 2004
- Collector Emitter Breakdown Voltage :
- 600V
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Input Type :
- Standard
- Turn-Off Delay Time :
- 140 ns
- Mounting Type :
- Through Hole
- Td (on/off) @ 25°C :
- 23ns/140ns
- ECCN Code :
- EAR99
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 8A
- Max Collector Current :
- 12A
- Reverse Recovery Time :
- 95 ns
- Fall Time-Max (tf) :
- 56ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Height :
- 16.12mm
- Case Connection :
- Isolated
- Radiation Hardening :
- No
- Max Power Dissipation :
- 39W
- Current - Collector Pulsed (Icm) :
- 24A
- Turn On Time :
- 43 ns
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Turn Off Time-Nom (toff) :
- 220 ns
- Current Rating :
- 12A
- Test Condition :
- 400V, 8A, 50 Ω, 15V
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 600V
- Power Dissipation :
- 39W
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 23 ns
- Termination :
- Through Hole
- Transistor Element Material :
- SILICON
- Switching Energy :
- 160μJ (on), 160μJ (off)
- Packaging :
- Tube
- Gate-Emitter Voltage-Max :
- 20V
- Width :
- 4.826mm
- Datasheets
- IRGIB7B60KDPBF
IRGIB7B60KDPBF Documents

IRGIB7B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGIB7B60KDPBF Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRGIB7B60KDPBF Features
? IGBT Technology with Low VCE (on) and No Punch Through.
? Short Circuit Capability of 10 s.
? RBSOA in Square.
? A positive temperature coefficient for the VCE (on).
? 175°C Maximum Junction Temperature rating.
? Free of lead
IRGIB7B60KDPBF Applications
Switching applications
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