IRGIB6B60KDPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

1.8V

Radiation Hardening :

No

Max Power Dissipation :

38W

Published :

2004

RoHS Status :

ROHS3 Compliant

Transistor Application :

Motor Control

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Turn Off Time-Nom (toff) :

258 ns

Rise Time :

17ns

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Weight :

2.299997g

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 5A

Case Connection :

Isolated

Number of Pins :

3

Width :

4.8006mm

Reverse Recovery Time :

70 ns

Current Rating :

13A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.5918mm

REACH SVHC :

No SVHC

Fall Time-Max (tf) :

27ns

Height :

16.002mm

Current - Collector Pulsed (Icm) :

22A

Gate-Emitter Thr Voltage-Max :

5.5V

Number of Elements :

1

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Power Dissipation :

38W

Gate-Emitter Voltage-Max :

20V

Switching Energy :

110μJ (on), 135μJ (off)

Collector Emitter Voltage (VCEO) :

2.2V

Max Collector Current :

11A

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Td (on/off) @ 25°C :

25ns/215ns

Collector Emitter Breakdown Voltage :

600V

Voltage - Rated DC :

600V

Element Configuration :

Single

Gate Charge :

18.2nC

Test Condition :

400V, 5A, 100 Ω, 15V

Turn On Time :

45 ns

Input Type :

Standard

Transistor Element Material :

SILICON

IGBT Type :

NPT