IRG7PH42UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate Charge :

157nC

REACH SVHC :

No SVHC

Number of Terminations :

3

Fall Time-Max (tf) :

86ns

RoHS Status :

ROHS3 Compliant

Td (on/off) @ 25°C :

25ns/229ns

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

90A

Height :

20.7mm

Turn On Time :

51 ns

JEDEC-95 Code :

TO-247AC

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Weight :

38.000013g

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6V

Number of Pins :

3

Published :

2004

Max Collector Current :

85A

Rise Time-Max :

41ns

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

1.2kV

Voltage - Collector Emitter Breakdown (Max) :

1200V

Test Condition :

600V, 30A, 10 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

Packaging :

Tube

Turn Off Time-Nom (toff) :

444 ns

Width :

5.3086mm

Power Dissipation :

320W

Collector Emitter Saturation Voltage :

1.7V

IGBT Type :

Trench

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

2V

Turn-Off Delay Time :

229 ns

Length :

15.87mm

Mounting Type :

Through Hole

ECCN Code :

EAR99

Element Configuration :

Single

Turn On Delay Time :

25 ns

Mount :

Through Hole

Switching Energy :

2.11mJ (on), 1.18mJ (off)

Number of Elements :

1

Package / Case :

TO-247-3

Reverse Recovery Time :

153 ns

Max Power Dissipation :

320W

Factory Lead Time :

16 Weeks