IRG7PH28UD1MPBF
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- Mfr.Part #
- IRG7PH28UD1MPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 30A 115W TO247AC
- Stock
- 8,867
- In Stock ：
- 8,867
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- -/229ns
- Switching Energy :
- 543μJ (off)
- Test Condition :
- 600V, 15A, 22 Ω, 15V
- RoHS Status :
- RoHS Compliant
- Current - Collector Pulsed (Icm) :
- 100A
- Published :
- 2013
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- IGBT Type :
- Trench
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Gate Charge :
- 90nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 15A
- Max Power Dissipation :
- 115W
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Packaging :
- Tube
- Power - Max :
- 115W
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Gate-Emitter Thr Voltage-Max :
- 6V
- Max Collector Current :
- 30A
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 2.3V
- Datasheets
- IRG7PH28UD1MPBF
IRG7PH28UD1MPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PH28UD1MPBF Description
The IRG7PH28UD1MPBF is an insulated gate bipolar transistor with an ultra-low VF Diode for induction heating and soft switching applicaitons.
IRG7PH28UD1MPBF Features
-
Low VCE (ON) trench IGBT technology
-
Low switching losses
-
Square RBSOA
-
Ultra-low VF
-
1300Vpk repetitive transient capacity
-
100% of the parts tested for ILM
-
Positive VCE (ON) temperature coefficient
-
Tight parameter distribution
-
Lead-free package
IRG7PH28UD1MPBF Applications
-
Induction heating & soft switching applicaitons
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