IRFL9110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.7mm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Turn-Off Delay Time :

15 ns

Drain to Source Breakdown Voltage :

-100V

Rise Time :

27ns

Threshold Voltage :

-4V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.1A Tc

Number of Elements :

1

Element Configuration :

Single

Max Operating Temperature :

150°C

Supplier Device Package :

SOT-223

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Input Capacitance :

200pF

Vgs (Max) :

±20V

Fall Time (Typ) :

17 ns

REACH SVHC :

Unknown

Drain to Source Resistance :

1.2Ohm

Lead Free :

Lead Free

Height :

1.45mm

Weight :

250.212891mg

Package / Case :

TO-261-4, TO-261AA

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.7mm

Published :

2015

Continuous Drain Current (ID) :

1.1A

Rds On Max :

1.2 Ω

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Power Dissipation-Max :

2W Ta 3.1W Tc

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Resistance :

1.2Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

2W

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 660mA, 10V