IRFL4315

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

150V

Published :

1999

Package / Case :

TO-261-4, TO-261AA

Case Connection :

DRAIN

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.185Ohm

Pulsed Drain Current-Max (IDM) :

21A

JESD-30 Code :

R-PDSO-G4

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

38 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.6A, 10V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

150V

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

2.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

5V @ 250μA

Qualification Status :

Not Qualified

Power Dissipation-Max :

2.8W Ta