IRFL4310TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Lead Free :

Lead Free

Number of Elements :

1

Threshold Voltage :

2V

Max Junction Temperature (Tj) :

150°C

Height :

1.8mm

Additional Feature :

High Reliability

Contact Plating :

Tin

Series :

HEXFET®

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 10V

Turn-Off Delay Time :

34 ns

Voltage - Rated DC :

100V

Drain Current-Max (Abs) (ID) :

2.2A

Case Connection :

DRAIN

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Min Breakdown Voltage :

100V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7.8 ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Resistance :

200mOhm

Continuous Drain Current (ID) :

1.6A

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

FET Type :

N-Channel

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Length :

6.6802mm

Radiation Hardening :

No

Current Rating :

1.6A

Recovery Time :

110 ns

Width :

3.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Power Dissipation :

2.1W

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Fall Time (Typ) :

20 ns

Published :

1999

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PDSO-G4

Rise Time :

18ns

Power Dissipation-Max :

1W Ta