IRFL4310TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Min Breakdown Voltage :

100V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Height :

1.8mm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Current Rating :

1.6A

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Number of Elements :

1

REACH SVHC :

No SVHC

Rise Time :

18ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Length :

6.6802mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Published :

1999

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

2.1W

Drain Current-Max (Abs) (ID) :

2.2A

Contact Plating :

Tin

Resistance :

200mOhm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2V

JESD-30 Code :

R-PDSO-G4

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Number of Pins :

3

Element Configuration :

Single

Turn On Delay Time :

7.8 ns

Number of Terminations :

4

Recovery Time :

110 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

34 ns

Width :

3.7mm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

4 V

Mount :

Surface Mount

Continuous Drain Current (ID) :

1.6A

Package / Case :

TO-261-4, TO-261AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Power Dissipation-Max :

1W Ta