IRFL4105TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.7A, 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.045Ohm

Mounting Type :

Surface Mount

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

3.7A

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Published :

1999

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Power Dissipation-Max :

1W Ta

Number of Elements :

1

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

FET Type :

N-Channel

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)