IRFL4105

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1W Ta

Drain Current-Max (Abs) (ID) :

3.7A

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

55V

Published :

1999

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.045Ohm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-261-4, TO-261AA

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Series :

HEXFET®

Packaging :

Tube

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Terminations :

4

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V