IRFL110

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Mfr.Part #
IRFL110
Manufacturer
Vishay
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 1.5A SOT223
Stock
14,172
In Stock :
14,172

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
9.4 ns
Turn-Off Delay Time :
15 ns
Width :
3.7mm
Supplier Device Package :
SOT-223
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
Non-RoHS Compliant
Drain to Source Breakdown Voltage :
100V
Input Capacitance :
180pF
Published :
2016
Number of Elements :
1
Drain to Source Resistance :
540mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
6.9 ns
Power Dissipation :
2W
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
1.5A Tc
Vgs (Max) :
±20V
Package / Case :
TO-261-4, TO-261AA
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
540mOhm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Max Operating Temperature :
150°C
Weight :
250.212891mg
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Continuous Drain Current (ID) :
1.5A
Power Dissipation-Max :
2W Ta 3.1W Tc
Length :
6.7mm
Rds On Max :
540 mΩ
Height :
1.8mm
Rise Time :
16ns
Number of Pins :
4
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
100V
Number of Channels :
1
Packaging :
Tube
Mount :
Surface Mount
Datasheets
IRFL110
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFL110 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, Number of Channels:1, IRFL110 pinout, IRFL110 datasheet PDF, IRFL110 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFL110 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFL110


N-Channel Tube 540mOhm @ 900mA, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-261-4, TO-261AA

IRFL110 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 180pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 540mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFL110 Features


a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRFL110 Applications


There are a lot of Vishay Siliconix
IRFL110 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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