IRFL024ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Rise Time :

21ns

Length :

6.6802mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Power Dissipation :

2.8W

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

57.5m Ω @ 3.1A, 10V

Lead Free :

Contains Lead, Lead Free

Terminal Form :

Gull wing

Current Rating :

1A

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Turn On Delay Time :

7.8 ns

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Fall Time (Typ) :

23 ns

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Resistance :

57.5MOhm

Turn-Off Delay Time :

30 ns

Number of Elements :

1

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Position :

Dual

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.1A

Nominal Vgs :

4 V

Width :

3.7mm

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Series :

HEXFET®

Drain to Source Breakdown Voltage :

55V

Number of Pins :

3

Power Dissipation-Max :

1W Ta

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Height :

1.4478mm

Dual Supply Voltage :

55V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260