IRF3710ZSPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

59A

Rds On (Max) @ Id, Vgs :

18m Ω @ 35A, 10V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

160W Tc

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Case Connection :

DRAIN

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

100V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.018Ohm

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Terminal Position :

Single

Published :

2003

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

240A

Number of Elements :

1

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Avalanche Energy Rating (Eas) :

200 mJ