IRF3205SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Series :

HEXFET®

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Number of Terminations :

2

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

390A

Mounting Type :

Surface Mount

Factory Lead Time :

52 Weeks

DS Breakdown Voltage-Min :

55V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

264 mJ

Number of Elements :

1

Power Dissipation-Max :

200W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3247pF @ 25V

Vgs (Max) :

±20V

Terminal Position :

Single

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.008Ohm

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

75A