IRF3205SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

3247pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Published :

2001

Factory Lead Time :

52 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

DS Breakdown Voltage-Min :

55V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

390A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

264 mJ

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.008Ohm

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

200W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

2

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

75A

FET Type :

N-Channel