IRF3007PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Case Connection :

DRAIN

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Transistor Application :

SWITCHING

Rise Time :

80ns

Drain to Source Breakdown Voltage :

75V

Published :

2002

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

280 mJ

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Radiation Hardening :

No

Terminal Form :

Gull wing

Power Dissipation-Max :

200W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

ECCN Code :

EAR99

Height :

16.51mm

Mount :

Through Hole

REACH SVHC :

No SVHC

Series :

HEXFET®

Turn-Off Delay Time :

55 ns

Turn On Delay Time :

12 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

75A

Mounting Type :

Through Hole

Current Rating :

80A

Dual Supply Voltage :

75V

Resistance :

12.6Ohm

Transistor Element Material :

SILICON

Length :

10.668mm

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 48A, 10V

Width :

4.826mm

Power Dissipation :

200W

Lead Free :

Lead Free

Voltage - Rated DC :

75V

Nominal Vgs :

4 V

Number of Elements :

1

Fall Time (Typ) :

49 ns

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V