IRF3205STRLPBF

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Mfr.Part #
IRF3205STRLPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IRF3205 - 12V-300V N-CHANNEL POW
Stock
21,490
In Stock :
21,490

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Peak Reflow Temperature (Cel) :
260
Width :
10.54mm
Number of Pins :
3
Factory Lead Time :
12 Weeks
Drain Current-Max (Abs) (ID) :
75A
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Power Dissipation :
200W
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
55V
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Resistance :
8mOhm
JEDEC-95 Code :
TO-252
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
4V
JESD-30 Code :
R-PSSO-G2
Current Rating :
110A
Turn On Delay Time :
14 ns
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
Max Junction Temperature (Tj) :
175°C
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations :
2
Published :
2001
Fall Time (Typ) :
65 ns
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
8m Ω @ 62A, 10V
Dual Supply Voltage :
55V
Gate to Source Voltage (Vgs) :
20V
Termination :
SMD/SMT
Turn-Off Delay Time :
50 ns
Avalanche Energy Rating (Eas) :
264 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Lead Free :
Contains Lead, Lead Free
Height :
5.084mm
Series :
HEXFET®
Radiation Hardening :
No
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case Connection :
DRAIN
Rise Time :
101ns
Recovery Time :
104 ns
Mounting Type :
Surface Mount
ECCN Code :
EAR99
FET Type :
N-Channel
Power Dissipation-Max :
200W Tc
Nominal Vgs :
4 V
Drain to Source Breakdown Voltage :
55V
Continuous Drain Current (ID) :
110A
Number of Channels :
1
Length :
10.668mm
Terminal Form :
Gull wing
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF3205STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Channels:1, IRF3205STRLPBF pinout, IRF3205STRLPBF datasheet PDF, IRF3205STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF3205STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF3205STRLPBF


N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3205STRLPBF Description

The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.

IRF3205STRLPBF Features

● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free



IRF3205STRLPBF Applications

● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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