IRF3205STRLPBF

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Mfr.Part #
IRF3205STRLPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IRF3205 - 12V-300V N-CHANNEL POW
Stock
21,490
In Stock :
21,490

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Rise Time :
101ns
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
50 ns
Length :
10.668mm
Voltage - Rated DC :
55V
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
Drain Current-Max (Abs) (ID) :
75A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
260
Rds On (Max) @ Id, Vgs :
8m Ω @ 62A, 10V
Mount :
Surface Mount
Number of Pins :
3
Height :
5.084mm
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Resistance :
8mOhm
Series :
HEXFET®
Time@Peak Reflow Temperature-Max (s) :
30
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
55V
Published :
2001
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Radiation Hardening :
No
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Terminal Form :
Gull wing
Power Dissipation :
200W
Dual Supply Voltage :
55V
Number of Terminations :
2
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
200W Tc
Avalanche Energy Rating (Eas) :
264 mJ
Threshold Voltage :
4V
Recovery Time :
104 ns
REACH SVHC :
No SVHC
Number of Channels :
1
Nominal Vgs :
4 V
Termination :
SMD/SMT
Turn On Delay Time :
14 ns
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Max Junction Temperature (Tj) :
175°C
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current Rating :
110A
Width :
10.54mm
Element Configuration :
Single
Lead Free :
Contains Lead, Lead Free
Number of Elements :
1
Continuous Drain Current (ID) :
110A
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Fall Time (Typ) :
65 ns
JEDEC-95 Code :
TO-252
Datasheets
IRF3205STRLPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF3205STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF3205STRLPBF pinout, IRF3205STRLPBF datasheet PDF, IRF3205STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF3205STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF3205STRLPBF


N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3205STRLPBF Description

The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.

IRF3205STRLPBF Features

● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free



IRF3205STRLPBF Applications

● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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