IRF3007STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

120W Tc

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Published :

2004

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 48A, 10V

Drain to Source Voltage (Vdss) :

75V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0126Ohm

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

75V

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Continuous Drain Current (ID) :

62A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

320A

Avalanche Energy Rating (Eas) :

946 mJ

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE