IRF3205STRLPBF
- Mfr.Part #
- IRF3205STRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A D2PAK
- Stock
- 8,807
- In Stock :
- 8,807
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 75A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-252
- Avalanche Energy Rating (Eas) :
- 264 mJ
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 110A
- Current Rating :
- 110A
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HEXFET®
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 55V
- Power Dissipation :
- 200W
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 14 ns
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Fall Time (Typ) :
- 65 ns
- Nominal Vgs :
- 4 V
- JESD-30 Code :
- R-PSSO-G2
- Voltage - Rated DC :
- 55V
- Number of Terminations :
- 2
- Factory Lead Time :
- 12 Weeks
- Threshold Voltage :
- 4V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 146nC @ 10V
- Max Junction Temperature (Tj) :
- 175°C
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 200W Tc
- Dual Supply Voltage :
- 55V
- Length :
- 10.668mm
- Turn-Off Delay Time :
- 50 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 62A, 10V
- Rise Time :
- 101ns
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 10.54mm
- Resistance :
- 8mOhm
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Height :
- 5.084mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2001
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Recovery Time :
- 104 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3247pF @ 25V
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead, Lead Free
- Datasheets
- IRF3205STRLPBF

N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.
IRF3205STRLPBF Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF3205STRLPBF Applications
● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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