IRF3709PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

9.2 ns

Published :

2001

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

30V

Current Rating :

90A

Power Dissipation-Max :

3.1W Ta 120W Tc

Package / Case :

TO-220-3

Turn-Off Delay Time :

21 ns

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Number of Pins :

3

ECCN Code :

EAR99

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Rise Time :

171ns

Turn On Delay Time :

11 ns

Resistance :

9Ohm

Number of Terminations :

3

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Dual Supply Voltage :

30V

Number of Elements :

1

Radiation Hardening :

No

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Nominal Vgs :

3 V

Continuous Drain Current (ID) :

90A

Voltage - Rated DC :

30V

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain Current-Max (Abs) (ID) :

75A

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Packaging :

Tube

Power Dissipation :

120W

Lead Free :

Lead Free

Mount :

Through Hole

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

8.763mm

Width :

4.69mm

Element Configuration :

Single

Length :

10.5156mm

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3V