IRF3704ZSPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Case Connection :

DRAIN

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Power Dissipation-Max :

57W Tc

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Recovery Time :

17 ns

Mounting Type :

Surface Mount

Packaging :

Tube

Power Dissipation :

57W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Number of Terminations :

2

Nominal Vgs :

2.1 V

FET Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Turn On Delay Time :

8.9 ns

Rise Time :

38ns

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

42A

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 10V

Published :

2004

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 21A, 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

67A

Height :

4.83mm

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

11 ns

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Length :

10.67mm

Width :

9.65mm

Fall Time (Typ) :

4.2 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Resistance :

7.9mOhm

Current Rating :

67A

Voltage - Rated DC :

20V

Pulsed Drain Current-Max (IDM) :

260A

Vgs (Max) :

±20V

Terminal Form :

Gull wing