IRF362

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Mfr.Part #
IRF362
Manufacturer
International Rectifier
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
N-CHANNEL HERMETIC MOS HEXFET
Stock
160
In Stock :
160

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
TIN LEAD
Continuous Drain Current (ID) :
22 A
FET Feature :
-
Vgs (Max) :
-
Qualification Status :
COMMERCIAL
Surface Mount :
No
Terminal Position :
BOTTOM
Rds On (Max) @ Id, Vgs :
-
Pbfree Code :
No
FET Type :
N-Channel
DS Breakdown Voltage-Min :
400 V
Vgs(th) (Max) @ Id :
-
Transistor Application :
SWITCHING
Manufacturer :
Rochester Electronics LLC
JESD-609 Code :
e0
Power Dissipation (Max) :
300W
Pulsed Drain Current-Max (IDM) :
88 A
Product Status :
Active
Drain-source On Resistance-Max :
0.25 Ω
Package / Case :
TO-204AA, TO-3
Number of Elements :
1
RoHS :
Compliant
Operating Temperature :
-
Case Connection :
DRAIN
Series :
-
Terminal Form :
PIN/PEG
Package Shape :
Round
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
JESD-30 Code :
O-MBFM-P2
Drain to Source Resistance :
250 mΩ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
400 V
Reach Compliance Code :
Unknown
JEDEC-95 Code :
TO-204AE
Transistor Element Material :
SILICON
Number of Terminals :
2
Current - Continuous Drain (Id) @ 25°C :
22A
Drive Voltage (Max Rds On, Min Rds On) :
-
Polarity/Channel Type :
N-Channel
Package :
Bulk
Avalanche Energy Rating (Eas) :
980 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
TO-204AA (TO-3)
Datasheets
IRF362
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF362 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-204AA, TO-3, Operating Temperature:-, Mounting Type:Through Hole, IRF362 pinout, IRF362 datasheet PDF, IRF362 amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF362 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF362


N-Channel - - 400 V TO-204AA, TO-3

IRF362 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 980 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22 A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 88 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 250 mΩ. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400 V in order to maintain normal operation.Operating this transistor requires a 400 V drain to source voltage (Vdss).

IRF362 Features


the avalanche energy rating (Eas) is 980 mJ
a continuous drain current (ID) of 22 A
based on its rated peak drain current 88 A.
single MOSFETs transistor is 250 mΩ
a 400 V drain to source voltage (Vdss)


IRF362 Applications


There are a lot of International Rectifier
IRF362 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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