IRF3315SPBF

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Mfr.Part #
IRF3315SPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
HEXFET POWER MOSFET
Stock
9,874
In Stock :
9,874

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
84A
Vgs (Max) :
±20V
JESD-609 Code :
e3
Width :
9.65mm
Radiation Hardening :
No
Transistor Application :
SWITCHING
Nominal Vgs :
4 V
Lead Free :
Lead Free
Height :
4.83mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Termination :
SMD/SMT
Power Dissipation-Max :
3.8W Ta 94W Tc
Series :
HEXFET®
Turn On Delay Time :
9.6 ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Power Dissipation :
84W
Voltage - Rated DC :
150V
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Number of Elements :
1
Threshold Voltage :
4V
Turn-Off Delay Time :
49 ns
Drain to Source Breakdown Voltage :
150V
Peak Reflow Temperature (Cel) :
260
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Dual Supply Voltage :
150V
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Mount :
Surface Mount
Length :
10.67mm
Rise Time :
32ns
ECCN Code :
EAR99
Current Rating :
21A
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Terminations :
2
FET Type :
N-Channel
REACH SVHC :
No SVHC
Published :
1997
Fall Time (Typ) :
38 ns
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.082Ohm
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
30
Continuous Drain Current (ID) :
21A
Rds On (Max) @ Id, Vgs :
82m Ω @ 12A, 10V
Number of Pins :
3
Datasheets
IRF3315SPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF3315SPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, IRF3315SPBF pinout, IRF3315SPBF datasheet PDF, IRF3315SPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF3315SPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF3315SPBF


N-Channel Tube 82m Ω @ 12A, 10V ±20V 1300pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3315SPBF Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.Its maximum pulsed drain current is 84A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF3315SPBF Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V


IRF3315SPBF Applications


There are a lot of Infineon Technologies
IRF3315SPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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