IRF1607

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1250 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

142A Tc

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0075Ohm

Input Capacitance (Ciss) (Max) @ Vds :

7750pF @ 25V

Package / Case :

TO-220-3

Power Dissipation-Max :

380W Tc

Published :

2001

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

75A

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

75V

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

75V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 85A, 10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Packaging :

Tube

Surface Mount :

No

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

320nC @ 10V

Pulsed Drain Current-Max (IDM) :

570A

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE