IRF1503STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

510 mJ

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0033Ohm

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 140A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

5730pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

200W Tc

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

960A

Surface Mount :

yes

Published :

2010

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Terminations :

2

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc