IRF1407STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Length :

10.668mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 200W Tc

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Terminal Position :

Single

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

75A

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 78A, 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Height :

4.826mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

75V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

75V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

7.8mOhm

Power Dissipation :

3.8W

Number of Elements :

1

Factory Lead Time :

12 Weeks

Rise Time :

150ns

Published :

2004

Pulsed Drain Current-Max (IDM) :

520A

Fall Time (Typ) :

140 ns

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Width :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn-Off Delay Time :

150 ns

Series :

HEXFET®

Number of Pins :

3

Continuous Drain Current (ID) :

100A

Nominal Vgs :

4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260