IRF1407S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

520A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Power Dissipation-Max :

3.8W Ta 200W Tc

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 78A, 10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

75V

Avalanche Energy Rating (Eas) :

390 mJ

DS Breakdown Voltage-Min :

75V

Terminal Position :

Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0078Ohm

RoHS Status :

Non-RoHS Compliant

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE