IRF1407PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Mounting Type :

Through Hole

Length :

10.668mm

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

75V

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.826mm

Number of Elements :

1

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Rds On (Max) @ Id, Vgs :

7.8mOhm @ 78A, 10V

Threshold Voltage :

4V

Rds On Max :

7.8 mΩ

Max Operating Temperature :

175°C

Fall Time (Typ) :

140 ns

Height :

16.51mm

Package / Case :

TO-220-3

Input Capacitance :

5.6nF

Current Rating :

130A

Power Dissipation-Max :

330W Tc

Drain to Source Resistance :

7.8mOhm

Continuous Drain Current (ID) :

130A

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Voltage - Rated DC :

75V

Published :

2001

Resistance :

7.8Ohm

Nominal Vgs :

4 V

Packaging :

Tube

Supplier Device Package :

TO-220AB

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

150 ns

Power Dissipation :

330W

Number of Pins :

3

Drain to Source Voltage (Vdss) :

75V

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Series :

HEXFET®