IRF1407PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

140 ns

Continuous Drain Current (ID) :

130A

Packaging :

Tube

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Min Operating Temperature :

-55°C

Dual Supply Voltage :

75V

Resistance :

7.8Ohm

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

FET Type :

N-Channel

Rds On Max :

7.8 mΩ

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Package / Case :

TO-220-3

Turn On Delay Time :

11 ns

Length :

10.668mm

Drain to Source Voltage (Vdss) :

75V

Drain to Source Breakdown Voltage :

75V

Height :

16.51mm

Threshold Voltage :

4V

Width :

4.826mm

Supplier Device Package :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

330W Tc

Number of Elements :

1

Power Dissipation :

330W

Drain to Source Resistance :

7.8mOhm

Mount :

Through Hole

Input Capacitance :

5.6nF

Voltage - Rated DC :

75V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Element Configuration :

Single

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Current Rating :

130A

Turn-Off Delay Time :

150 ns

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Max Operating Temperature :

175°C

Series :

HEXFET®

Published :

2001

Rds On (Max) @ Id, Vgs :

7.8mOhm @ 78A, 10V

RoHS Status :

ROHS3 Compliant