IRF1407L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Vgs (Max) :

±20V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0078Ohm

Published :

2001

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

DS Breakdown Voltage-Min :

75V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 78A, 10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

520A

Avalanche Energy Rating (Eas) :

390 mJ

Mounting Type :

Through Hole

ECCN Code :

EAR99

Terminal Position :

Single

FET Type :

N-Channel

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Drain to Source Voltage (Vdss) :

75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

ULTRA LOW RESISTANCE

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.8W Ta 200W Tc

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

75A

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube