IRF1405ZSTRLPBF

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Mfr.Part #
IRF1405ZSTRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 75A D2PAK
Stock
5,160
In Stock :
5,160

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
15 Weeks
Lead Free :
Lead Free
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Power Dissipation :
230W
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
JESD-30 Code :
R-PSSO-G2
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
4780pF @ 25V
Transistor Element Material :
SILICON
Turn On Delay Time :
18 ns
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
30
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Terminations :
2
Fall Time (Typ) :
82 ns
Continuous Drain Current (ID) :
75A
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Height :
4.826mm
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Published :
2008
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
55V
Drain-source On Resistance-Max :
0.0049Ohm
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
600A
Rise Time :
110ns
Number of Pins :
3
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
420 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Elements :
1
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
230W Tc
Width :
9.65mm
Packaging :
Tape and Reel (TR)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Element Configuration :
Single
Series :
HEXFET®
Turn-Off Delay Time :
48 ns
Transistor Application :
SWITCHING
Length :
10.668mm
Rds On (Max) @ Id, Vgs :
4.9m Ω @ 75A, 10V
Terminal Form :
Gull wing
Datasheets
IRF1405ZSTRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405ZSTRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF1405ZSTRLPBF pinout, IRF1405ZSTRLPBF datasheet PDF, IRF1405ZSTRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405ZSTRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1405ZSTRLPBF


N-Channel Tape & Reel (TR) 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF1405ZSTRLPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 420 mJ.A device's maximum input capacitance is 4780pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 600A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF1405ZSTRLPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.


IRF1405ZSTRLPBF Applications


There are a lot of Infineon Technologies
IRF1405ZSTRLPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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