IRF1405ZSPBF

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Mfr.Part #
IRF1405ZSPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 75A D2PAK
Stock
10,031
In Stock :
10,031

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Series :
HEXFET®
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
30
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
600A
FET Type :
N-Channel
Terminal Form :
Gull wing
Number of Pins :
3
Rise Time :
110ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
420 mJ
Mounting Type :
Surface Mount
Resistance :
4.9mOhm
Input Capacitance (Ciss) (Max) @ Vds :
4780pF @ 25V
JESD-609 Code :
e3
Width :
9.65mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Power Dissipation-Max :
230W Tc
REACH SVHC :
No SVHC
Nominal Vgs :
4 V
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Turn-Off Delay Time :
48 ns
Threshold Voltage :
4V
Mount :
Surface Mount
Published :
2003
Number of Terminations :
2
Operating Temperature :
-55°C~175°C TJ
Drain to Source Breakdown Voltage :
55V
Turn On Delay Time :
18 ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Power Dissipation :
230W
Fall Time (Typ) :
82 ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code :
EAR99
Length :
10.668mm
Height :
4.826mm
Continuous Drain Current (ID) :
75A
Rds On (Max) @ Id, Vgs :
4.9m Ω @ 75A, 10V
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Datasheets
IRF1405ZSPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405ZSPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF1405ZSPBF pinout, IRF1405ZSPBF datasheet PDF, IRF1405ZSPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405ZSPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1405ZSPBF


N-Channel Tube 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF1405ZSPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 420 mJ.The maximum input capacitance of this device is 4780pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 600A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1405ZSPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V


IRF1405ZSPBF Applications


There are a lot of Infineon Technologies
IRF1405ZSPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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