IRF1405ZL-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

Mounting Type :

Through Hole

Series :

HEXFET®

Vgs (Max) :

±20V

FET Type :

N-Channel

Turn On Delay Time :

16 ns

Power Dissipation :

230W

Number of Pins :

7

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

120A

Max Operating Temperature :

175°C

Rds On Max :

4.9 mΩ

Mount :

Through Hole

Min Operating Temperature :

-55°C

Supplier Device Package :

TO-263CA-7

Drain to Source Resistance :

4.9mOhm

Input Capacitance :

5.36nF

Radiation Hardening :

No

Package / Case :

TO-263-7 (Straight Leads)

Fall Time (Typ) :

82 ns

Rise Time :

110ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Turn-Off Delay Time :

48 ns

Power Dissipation-Max :

230W Tc

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 88A, 10V

Published :

2013

RoHS Status :

RoHS Compliant

Length :

10.668mm

Input Capacitance (Ciss) (Max) @ Vds :

5360pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V