IRF1405STRLPBF

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Mfr.Part #
IRF1405STRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 131A D2PAK
Stock
51,500
In Stock :
51,500

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
75A
Rds On (Max) @ Id, Vgs :
5.3m Ω @ 101A, 10V
Power Dissipation-Max :
200W Tc
Number of Channels :
1
Pulsed Drain Current-Max (IDM) :
680A
Number of Pins :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
131A Tc
Mounting Type :
Surface Mount
Published :
2004
Resistance :
5.3mOhm
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time :
190ns
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
590 mJ
Terminal Form :
Gull wing
Length :
10.668mm
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
55V
Radiation Hardening :
No
JESD-609 Code :
e3
Lead Free :
Contains Lead, Lead Free
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
260
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Power Dissipation :
200W
ECCN Code :
EAR99
Fall Time (Typ) :
110 ns
Transistor Element Material :
SILICON
Height :
5.084mm
JESD-30 Code :
R-PSSO-G2
Drain to Source Breakdown Voltage :
55V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HEXFET®
Current Rating :
131A
RoHS Status :
ROHS3 Compliant
Width :
9.65mm
Operating Temperature :
-55°C~175°C TJ
Recovery Time :
130 ns
Input Capacitance (Ciss) (Max) @ Vds :
5480pF @ 25V
Mount :
Surface Mount
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Factory Lead Time :
12 Weeks
Vgs (Max) :
±20V
Turn On Delay Time :
13 ns
Max Junction Temperature (Tj) :
175°C
Turn-Off Delay Time :
130 ns
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
131A
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Number of Elements :
1
Datasheets
IRF1405STRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IRF1405STRLPBF pinout, IRF1405STRLPBF datasheet PDF, IRF1405STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1405STRLPBF


N-Channel Tape & Reel (TR) 5.3m Ω @ 101A, 10V ±20V 5480pF @ 25V 260nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF1405STRLPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 590 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5480pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 680A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF1405STRLPBF Features


the avalanche energy rating (Eas) is 590 mJ
a continuous drain current (ID) of 131A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 680A.


IRF1405STRLPBF Applications


There are a lot of Infineon Technologies
IRF1405STRLPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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