IRF1405S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 101A, 10V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Power Dissipation-Max :

200W Tc

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

55V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

225

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Avalanche Energy Rating (Eas) :

590 mJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

131A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

680A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

JESD-609 Code :

e0

Published :

2004

Drain-source On Resistance-Max :

0.0053Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Terminal Position :

Single

HTS Code :

8541.29.00.95