IRF1404STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Series :

HEXFET®

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

519 mJ

Number of Terminations :

2

Transistor Application :

SWITCHING

Terminal Position :

Single

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

650A

Power Dissipation-Max :

3.8W Ta 200W Tc

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.004ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Finish :

MATTE TIN OVER NICKEL

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

162A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Published :

2001

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant