IRF1404PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

FET Type :

N-Channel

Radiation Hardening :

No

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

202A Tc

Fall Time (Typ) :

33 ns

REACH SVHC :

No SVHC

Width :

4.826mm

Avalanche Energy Rating (Eas) :

620 mJ

Transistor Element Material :

SILICON

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-3

Voltage - Rated DC :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

808A

Turn-Off Delay Time :

46 ns

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5669pF @ 25V

Turn On Delay Time :

17 ns

Power Dissipation :

333W

Rise Time :

190ns

Dual Supply Voltage :

40V

Current Rating :

162A

Threshold Voltage :

4V

ECCN Code :

EAR99

Number of Terminations :

3

Continuous Drain Current (ID) :

202A

Lead Pitch :

2.54mm

Lead Free :

Lead Free

Length :

10.668mm

Power Dissipation-Max :

333W Tc

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Contact Plating :

Tin

Recovery Time :

117 ns

RoHS Status :

ROHS3 Compliant

Published :

2003

Case Connection :

DRAIN

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Height :

19.8mm

Drain to Source Breakdown Voltage :

40V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Termination :

Through Hole

Rds On (Max) @ Id, Vgs :

4m Ω @ 121A, 10V

Resistance :

4mOhm

Number of Pins :

3

Max Junction Temperature (Tj) :

175°C