IRF1404L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.004ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

650A

Series :

HEXFET®

FET Type :

N-Channel

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.29.00.95

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain Current-Max (Abs) (ID) :

75A

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Power Dissipation-Max :

3.8W Ta 200W Tc

Surface Mount :

No

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

162A Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

519 mJ

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

225

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Published :

2001

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

ECCN Code :

EAR99